Transphorm

When designing Gen IV, Transphorm’s engineering team drew on learnings from production ramps of previous products, coupled with a constant drive for performance, manufacturability, and cost reduction to design a new product with ultimate simplicity and substantial improvements. The new platform’s patented technology delivers benefits that augment Transphorm’s intrinsic GaN performance and simplicity both in assembly and applications, which is the catalyst for the SuperGaN® brand. Driven by its patented technology, SuperGaN Gen IV benefits include: Increased Performance: Gen IV provides a flatter and higher efficiency curve with an improved Figure of Merit (RON*QOSS) of approximately 10 percent. Easier Designability: Gen IV offers increased simplicity of design-in by removing the need for a switching node snubber at high operation currents. Enhanced Inrush Current Capability (di/dt):Gen IV removes the switching current limits for the built-in freewheeling diode function in half bridges. Reduced Device Cost: Gen IV’s design innovations and patented technology simplify device assembly, too. The resulting cost adjustments continue to bring Transphorm’s GaN closer to Silicon transistor pricing. Proven Robustness/Reliability: Gen IV’s 35 mΩ FET offers the same gate robustness of +/- 20 Vmax and noise immunity of 4 V that is currently delivered by Transphorm’s Gen III devices.