金属-氧化物半导体场效应晶体管,简称金氧半场效晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET)是一种可以广泛使用在模拟电路与数字电路的场效晶体管(field-effect transistor)。
The TP65H300G4LSG 650V, 240 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a sta...
The TP65H150G4LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and...
The TP65H480G4JSG 650V, 480mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a stat...
The TP65H070L Series 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. They combine state-of-the-art high voltage GaN HEMT ...
The TP65H050G4WS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a stat...